mechanical specifications: die size 85 x 85 mils die thickness 5.9 mils 0.8 mils die passivation sin anode bonding pad area 75 x 75 mils top side metalization al C 30,000? back side metalization ti/ni/au C 1,600?/5,550?/1,500? scribe alley width 3.15 mils wafer diameter 5 inches gross die per wafer 2,260 the CPD32X schottky die is optimized for alternative energy applications. the 6 mil thick die provides an ultra low pro? le that is readily attached via standard die attach methods. parametrically, the device is extremely energy effi cient as a result of low forward and reverse conduction losses. features: ? low forward voltage at 10 amps forward current ? low reverse leakage current ? low profile geometry ? metalization suitable for standard die attach technologies ? top metalization optimized for wire bonding applications: the CPD32X is optimized for use as a by-pass recti? er in low pro? le solar (pv) panels. maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v dc blocking voltage v r 40 v average forward current i o 10 a peak forward surge current (tp=8.3ms) i fsm 250 a operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =10v 10 200 a i r v r =40v 30 500 a i r v r =40v, t a =100c 15 50 ma bv r i r =0.5ma 40 v v f i f =5.0a 0.43 0.48 v v f i f =10a 0.48 0.52 v packing options: ? CPD32X-wn: full wafer ? CPD32X-wr: sawn wafer on plastic ring CPD32X schottky rectifier die 10 amp, 40 volt www.centralsemi.com r3 (2-december 2011) www.centralsemi. com
CPD32X typical electrical characteristics www.centralsemi.com r3 (2-december 2011)
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